High-Endurance Ultra-Thin Tunnel Oxide in MONOS Device Structure for Dynamic Memory Application

H. Clement Wann, Chen-Ming Hu

Research output: Contribution to journalArticle

39 Scopus citations

Abstract

Ultra-thin tunnel oxide can conduct very high current through oxide via direct tunneling, and charge-to-breakdown increases dramatically due to less oxide damage. These facts point to a possibility of using thin tunnel oxide in the floating-gate device structure for dynamic memory applications. We have chosen MONOS structure in this study due to its immunity to pinhole-induced leakage and back-tunneling. The memory device exhibits fast WRITE/ERASE speed, high-endurance, long data retention and non-destructive READ. Further improvements are expected through process optimization.

Original languageEnglish
Pages (from-to)491-493
Number of pages3
JournalIEEE Electron Device Letters
Volume16
Issue number11
DOIs
StatePublished - 1 Jan 1995

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