Ultra-thin tunnel oxide can conduct very high current through oxide via direct tunneling; charge-to-breakdown increases dramatically due to less oxide damage. These facts point to a possibility of using ultra-thin tunnel oxide in the floating-gate device structure for dynamic-memory applications. We chose MONOS structure in this study due to its immunity to defect-induced leakage and back-tunneling. The memory device exhibits fast WRITE/ERASE speed, high endurance, long data retention and non-destructive READ. Further improvements are expected through process optimization.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA|
Duration: 10 Dec 1995 → 13 Dec 1995