High endurance ultra-thin tunnel oxide for dynamic memory application

Clement H J Wann*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

Ultra-thin tunnel oxide can conduct very high current through oxide via direct tunneling; charge-to-breakdown increases dramatically due to less oxide damage. These facts point to a possibility of using ultra-thin tunnel oxide in the floating-gate device structure for dynamic-memory applications. We chose MONOS structure in this study due to its immunity to defect-induced leakage and back-tunneling. The memory device exhibits fast WRITE/ERASE speed, high endurance, long data retention and non-destructive READ. Further improvements are expected through process optimization.

Original languageEnglish
Pages (from-to)867-870
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1995
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 10 Dec 199513 Dec 1995

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