High endurance and multilevel operation in oxide semiconductor-based resistive RAM using thin-film transistor as a selector

Yang Shun Fan, Po-Tsun Liu, Chun Ching Chen, Che Chia Chang

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO2/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 104 s at 85°C. Electric-pulse-induced resistance switching test up to 108 switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications.

Original languageEnglish
Pages (from-to)Q41-Q43
JournalECS Solid State Letters
Volume4
Issue number9
DOIs
StatePublished - 1 Jan 2015

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