High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, Hao-Chung Kuo, Hsiao-Wen Zan, S. C. Wang, C. Y. Chang, S. C. Huang

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

We report the fabrication and study of high efficiency ultraviolet light emitting diodes with inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures were created by anisotropic chemical wet etching. The pyramid structures have significantly enhanced the light output efficiency and at the same time also improved the crystal quality by partially relieving the strain and reducing the dislocation defects in GaN. The electroluminescent output power at normal direction was enhanced by 120% at 20 mA injection current and the output power integrated over all directions was enhanced by 85% compared to a reference sample.

Original languageEnglish
Article number041109
JournalApplied Physics Letters
Volume95
Issue number4
DOIs
StatePublished - 11 Aug 2009

Fingerprint Dive into the research topics of 'High efficiency light emitting diode with anisotropically etched GaN-sapphire interface'. Together they form a unique fingerprint.

Cite this