High efficiency InGaP/GaAs solar cell with sub-wavelength structure on AlInP window layer

Min An Tsai*, Peichen Yu, C. H. Chiu, Hao-Chung Kuo, Tien-chang Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this study, InGaP/GaAs solar cells fabricated by a Sub-wavelength surface texture process are presented. The characteristics of the InGaP/GaAs solar cells with and without the Sub-wavelength surface texture are studied. The conversion efficiency measured under one-sun air mass 1.5 global illumination at room temperature can also be improved from 10.8%. The simulated result of the Sub-wavelength structure by the RCWA was demonstrated that absorption of the solar cell will increase by the Sub-wavelength surface texture.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages781-782
Number of pages2
DOIs
StatePublished - 5 Jan 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 3 Jan 20108 Jan 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period3/01/108/01/10

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