High-Efficiency InGaN/GaN Core-Shell Nanorod Light-Emitting Diodes with Low-Peak Blueshift and Efficiency Droop

An Jye Tzou, Dan Hua Hsieh, Kuo Bin Hong, Da Wei Lin, Jhih Kai Huang, Tzu Pei Chen, Tsung-Sheng Kao, Yang Fang Chen, Tien-Chang Lu, Chyong-Hua Chen, Hao-Chung Kuo, Chun-Yen Chang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this study, novel three-dimensional (3-D) nanoscale structures and methodology are demonstrated for application in high-efficiency core-shell nanorod (NR) light-emitting diodes (LEDs). The key to our successful growth of the structures is the introduction of passivation, which can be used to selectively grow active layers in desired structures. Through the fabrication methodology, core-shell NR green LEDs exhibiting large nonpolar active region and homogeneous indium distributions without a point tip shape were achieved. Stable light emission at a central wavelength of 518 nm was achieved as the injected current increased to more than 40 mA. The improved NR LEDs exhibited a stable luminescence emission wavelength (blueshift of 62 nm) and low-efficiency droop (18.1%) at 200 mA. Our scheme is scalable and compatible with current technologies, which provides a new perspective for developing high-performance, 3-D nanoscale optoelectronic devices.

Original languageEnglish
Article number7792136
Pages (from-to)355-358
Number of pages4
JournalIEEE Transactions on Nanotechnology
Volume16
Issue number2
DOIs
StatePublished - 1 Mar 2017

Keywords

  • GaN
  • light-emitting diodes (LEDs), nanolithography
  • nanophotonics
  • nanoscale devices
  • semiconductor nanostructures

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