High-efficiency InGaN-based LEDs grown on patterned sapphire substrates using nanoimprinting technology

Yeeu Chang Lee*, Shiang Chih Yeh, Yen Yu Chou, Pei Jung Tsai, Jui-Wen Pan, Hsiu Mei Chou, Chia Hung Hou, Yung Yuan Chang, Min Sheng Chu, Cheng Hui Wu, Chun Hsien Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

This study employed roller imprint lithography and dry etching to fabricate patterned sapphire substrates (PSSs) of convex-shape with features of various heights. A soft polymer, polydimethylsiloxane (PDMS), was used as a mold to duplicate the pattern of a hard silicon template. The imprinted material was spin deposited onto a PDMS mold and transferred to the sapphire substrate using roller imprinting equipment. Inductive coupled plasma (ICP) etching was then used to fabricate the PSS. After epitaxial growth and chip processing, the current-voltage characteristics and light output of various LEDs were measured. The results demonstrate that the PSS process did not detract from the electrical properties of the LEDs; in fact, the output power of the proposed PSS LEDs was 25-30% greater than that of conventional LEDs. Simulation results show that PSS LEDs with structures of various heights would enhance optical efficiency in a manner similar to that demonstrated in these experiments.

Original languageEnglish
Pages (from-to)86-90
Number of pages5
JournalMicroelectronic Engineering
Volume105
DOIs
StatePublished - 25 Feb 2013

Keywords

  • Light extraction efficiency
  • Light-emitting diodes
  • Roller imprint lithography

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