High efficiency GaN-based near UV light emitting diodes with asymmetric triangular multiple quantum wells

Heng Li, Chia Jui Chang, Shiou Yi Kuo, Jun Rong Chen, Tien-chang Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Near-ultraviolet (NUV) light-emitting diodes (LEDs) have found many applications in the areas such as UV curing, bio-chemical sensors etc. However, the internal quantum efficiency (IQE) of NUV-LEDs show relatively lower value than blue LEDs. In previous research, asymmetric triangular MQWs with gallium face-oriented inclination in the blue wavelength band are demonstrated to have higher emission efficiency and lower efficiency droop. In this study, we surprisingly found different trend in NUV-LEDs. Compared to blue LEDs, NUV-LEDs tend to have shallower quantum wells and less ability to localize holes. In the simulation results, holes are more confined within nitrogen face-oriented inclination than that in MQWs with gallium face-oriented inclination and the IQE are improved about 10%.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XXII
EditorsMichael R. Krames, Martin Strassburg, Li-Wei Tu, Jong Kyu Kim
PublisherSPIE
ISBN (Electronic)9781510615939
DOIs
StatePublished - 1 Jan 2018
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII 2018 - San Francisco, United States
Duration: 29 Jan 201831 Jan 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10554
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII 2018
CountryUnited States
CitySan Francisco
Period29/01/1831/01/18

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