In this paper, the high performance GaN-based light-emitting diodes (LEDs) with embedded microscale air voids and an SiO 2 nanomask by metalorganic chemical vapor deposition (MOCVD) were demonstrated. Microscale air voids and an SiO 2 nanomask were clearly observed at the interface between GaN nanorods (NRs) and the overgrown GaN layer by scanning electron microscopy (SEM). From the reflectance spectra we show strong reflectance differences due to the different refractive index gradient between the GaN grown on the nanotemplate and sapphire. It can increase the light extraction efficiency due to additional light scattering. The transmission electron microscopy (TEM) images show the threading dislocations were suppressed by nanoscale epitaxial lateral overgrowth (NELOG). The LEDs with embedded microscale air voids and an SiO 2 nanomask exhibit smaller reverse-bias current and large enhancement of the light output (65% at 20mA) compared with conventional LEDs.
- Laterally Overgrown GaN