High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks

Ching Hsueh Chiu*, Chien-Chung Lin, Hau Vei Han, Che Yu Liu, Yan Hao Chen, Yu-Pin Lan, Pei-Chen Yu, Hao-Chung Kuo, Tien-Chang Lu, Shing Chung Wang, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

In this paper, the high performance GaN-based light-emitting diodes (LEDs) with embedded microscale air voids and an SiO 2 nanomask by metalorganic chemical vapor deposition (MOCVD) were demonstrated. Microscale air voids and an SiO 2 nanomask were clearly observed at the interface between GaN nanorods (NRs) and the overgrown GaN layer by scanning electron microscopy (SEM). From the reflectance spectra we show strong reflectance differences due to the different refractive index gradient between the GaN grown on the nanotemplate and sapphire. It can increase the light extraction efficiency due to additional light scattering. The transmission electron microscopy (TEM) images show the threading dislocations were suppressed by nanoscale epitaxial lateral overgrowth (NELOG). The LEDs with embedded microscale air voids and an SiO 2 nanomask exhibit smaller reverse-bias current and large enhancement of the light output (65% at 20mA) compared with conventional LEDs.

Original languageEnglish
Article number045303
Number of pages7
JournalNanotechnology
Volume23
Issue number4
DOIs
StatePublished - 3 Feb 2012

Keywords

  • Laterally Overgrown GaN
  • Layer

Fingerprint Dive into the research topics of 'High efficiency GaN-based light-emitting diodes with embedded air voids/SiO<sub>2</sub> nanomasks'. Together they form a unique fingerprint.

Cite this