We have presented a design method of RF power Si-MOSFETs for low voltage and high power-added efficiency operation. It has been demonstrated that 0.2 μm gate length Co-salicided Si MOSFETs can achieve high power-added efficiency of more than 50% at 2 GHz RF operation with sufficient breakdown voltage (Vdss) by choosing optimum gate oxide thickness and N extension impurity concentration. Especially, efficiency of more than 50% was confirmed under very low supply voltage of 1.0 V, as well as higher supply voltage such as 2 and 3V. Small gate length Co salicided Si-MOSFET is a good candidate for low-voltage, high-efficiency RF power circuits for 2 GHz operation.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1996|
|Event||Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 8 Dec 1996 → 11 Dec 1996