High dielectric constant gate insulator technology using rare earth oxides

Hiroshi Iwai*, Shun'ichiro Ohmi, Sadahiro Akama, Chizuru Ohshima, Ikumi Kashiwagi, Akira Kikuchi, Jun'ichi Taguchi, Hiroyuki Yamamoto, Isao Ueda, Atsushi Kuriyama, Jun'ichi Tonotani, Yongshik Kim, Yoshiaki Yoshihara, Hiroshi Ishiwara

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

Among the high-κ gate dielectrics, ZrO2 and HfO 2 are regarded as the most promising candidates. However, these materials still have some problems such as interfacial layer and micro-crystal formations during the post deposition annealing process. These problems lead to the increase of EOT and gate leakage current. In this paper, present status of rare earth oxides as possible candidates for post HfO2 gate dielectrics is reviewed.

Original languageEnglish
Pages27-40
Number of pages14
StatePublished - 2003
EventPhysics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States
Duration: 20 Oct 200224 Oct 2002

Conference

ConferencePhysics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
CountryUnited States
CitySalt Lake City, UT
Period20/10/0224/10/02

Fingerprint Dive into the research topics of 'High dielectric constant gate insulator technology using rare earth oxides'. Together they form a unique fingerprint.

Cite this