High dielectric constant gate insulator technology using rare earth oxides

Hiroshi Iwai; Shun'ichiro Ohmi; Sadahiro Akama; Chizuru Ohshima; Ikumi Kashiwagi; Akira Kikuchi; Jun'ichi Taguchi; Hiroyuki Yamamoto; Isao Ueda; Atsushi Kuriyama; Jun'ichi Tonotani; Yongshik Kim; Yoshiaki Yoshihara; Hiroshi Ishiwara

High dielectric constant gate insulator technology using rare earth oxides

Hiroshi Iwai^*, Shun'ichiro Ohmi, Sadahiro Akama, Chizuru Ohshima, Ikumi Kashiwagi, Akira Kikuchi, Jun'ichi Taguchi, Hiroyuki Yamamoto, Isao Ueda, Atsushi Kuriyama, Jun'ichi Tonotani, Yongshik Kim, Yoshiaki Yoshihara, Hiroshi Ishiwara

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

Among the high-κ gate dielectrics, ZrO₂ and HfO ₂ are regarded as the most promising candidates. However, these materials still have some problems such as interfacial layer and micro-crystal formations during the post deposition annealing process. These problems lead to the increase of EOT and gate leakage current. In this paper, present status of rare earth oxides as possible candidates for post HfO₂ gate dielectrics is reviewed.

Original language	English
Pages	27-40
Number of pages	14
State	Published - 2003
Event	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States Duration: 20 Oct 2002 → 24 Oct 2002

Conference

Conference	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
Country	United States
City	Salt Lake City, UT
Period	20/10/02 → 24/10/02

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Iwai, H., Ohmi, S., Akama, S., Ohshima, C., Kashiwagi, I., Kikuchi, A., Taguchi, J., Yamamoto, H., Ueda, I., Kuriyama, A., Tonotani, J., Kim, Y., Yoshihara, Y., & Ishiwara, H. (2003). High dielectric constant gate insulator technology using rare earth oxides. 27-40. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Iwai, Hiroshi ; Ohmi, Shun'ichiro ; Akama, Sadahiro ; Ohshima, Chizuru ; Kashiwagi, Ikumi ; Kikuchi, Akira ; Taguchi, Jun'ichi ; Yamamoto, Hiroyuki ; Ueda, Isao ; Kuriyama, Atsushi ; Tonotani, Jun'ichi ; Kim, Yongshik ; Yoshihara, Yoshiaki ; Ishiwara, Hiroshi. / High dielectric constant gate insulator technology using rare earth oxides. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.14 p.

@conference{ac52e12765ae49e89467b9dc94f059ae,

title = "High dielectric constant gate insulator technology using rare earth oxides",

abstract = "Among the high-κ gate dielectrics, ZrO2 and HfO 2 are regarded as the most promising candidates. However, these materials still have some problems such as interfacial layer and micro-crystal formations during the post deposition annealing process. These problems lead to the increase of EOT and gate leakage current. In this paper, present status of rare earth oxides as possible candidates for post HfO2 gate dielectrics is reviewed.",

author = "Hiroshi Iwai and Shun'ichiro Ohmi and Sadahiro Akama and Chizuru Ohshima and Ikumi Kashiwagi and Akira Kikuchi and Jun'ichi Taguchi and Hiroyuki Yamamoto and Isao Ueda and Atsushi Kuriyama and Jun'ichi Tonotani and Yongshik Kim and Yoshiaki Yoshihara and Hiroshi Ishiwara",

year = "2003",

language = "English",

pages = "27--40",

note = "null ; Conference date: 20-10-2002 Through 24-10-2002",

}

Iwai, H, Ohmi, S, Akama, S, Ohshima, C, Kashiwagi, I, Kikuchi, A, Taguchi, J, Yamamoto, H, Ueda, I, Kuriyama, A, Tonotani, J, Kim, Y, Yoshihara, Y & Ishiwara, H 2003, 'High dielectric constant gate insulator technology using rare earth oxides', Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States, 20/10/02 - 24/10/02 pp. 27-40.

High dielectric constant gate insulator technology using rare earth oxides. / Iwai, Hiroshi; Ohmi, Shun'ichiro; Akama, Sadahiro; Ohshima, Chizuru; Kashiwagi, Ikumi; Kikuchi, Akira; Taguchi, Jun'ichi; Yamamoto, Hiroyuki; Ueda, Isao; Kuriyama, Atsushi; Tonotani, Jun'ichi; Kim, Yongshik; Yoshihara, Yoshiaki; Ishiwara, Hiroshi.

2003. 27-40 Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - High dielectric constant gate insulator technology using rare earth oxides

AU - Iwai, Hiroshi

AU - Ohmi, Shun'ichiro

AU - Akama, Sadahiro

AU - Ohshima, Chizuru

AU - Kashiwagi, Ikumi

AU - Kikuchi, Akira

AU - Taguchi, Jun'ichi

AU - Yamamoto, Hiroyuki

AU - Ueda, Isao

AU - Kuriyama, Atsushi

AU - Tonotani, Jun'ichi

AU - Kim, Yongshik

AU - Yoshihara, Yoshiaki

AU - Ishiwara, Hiroshi

PY - 2003

Y1 - 2003

N2 - Among the high-κ gate dielectrics, ZrO2 and HfO 2 are regarded as the most promising candidates. However, these materials still have some problems such as interfacial layer and micro-crystal formations during the post deposition annealing process. These problems lead to the increase of EOT and gate leakage current. In this paper, present status of rare earth oxides as possible candidates for post HfO2 gate dielectrics is reviewed.

AB - Among the high-κ gate dielectrics, ZrO2 and HfO 2 are regarded as the most promising candidates. However, these materials still have some problems such as interfacial layer and micro-crystal formations during the post deposition annealing process. These problems lead to the increase of EOT and gate leakage current. In this paper, present status of rare earth oxides as possible candidates for post HfO2 gate dielectrics is reviewed.

UR - http://www.scopus.com/inward/record.url?scp=8744242292&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:8744242292

SP - 27

EP - 40

Y2 - 20 October 2002 through 24 October 2002

ER -

Iwai H, Ohmi S, Akama S, Ohshima C, Kashiwagi I, Kikuchi A et al. High dielectric constant gate insulator technology using rare earth oxides. 2003. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

High dielectric constant gate insulator technology using rare earth oxides

Abstract

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