High-density RF MIM capacitors using high-k La2O3 dielectrics

M. Y. Yang*, D. S. Yu, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

51 Scopus citations

Abstract

The integrity of the metal-insulator-metal (MIM) capacitor with high-k La2O3 dielectrics formed using a 400°C back-end process I was investigated. A very high capacitance per unit area of 9.2 fF/μm2 was achieved for La2O3 MIM capacitors at 1 MHz, significantly reducing the chip size of radio frequency (rf) circuits. A mathematical derivation, involving measured 5 parameters, yielded the small voltage-dependent capacitance (ΔC/C) ≤100 ppm at 1 GHz, indicating that the precision capacitor circuit can be applied in the rf regime. Furthermore, such a high capacitance density can be maintained as the frequency is increased from 10 KHz to 20 GHz with a large Q factor ≥90.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume151
Issue number7
DOIs
StatePublished - 2 Aug 2004

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