High density RF MIM capacitors using high-κ AlTaOx dielectrics

C. H. Huang*, M. Y. Yang, Albert Chin, Chunxiang Zhu, M. F. Li, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalConference article

25 Scopus citations

Abstract

Radiofrequency (RF) metal-insulator-metal (MIM) capacitors based on high-permittivity AlTaOx dielectrics were presented. A high capacitance density of 10 fF/νm2 and small capacitance reduction of 5% was achieved with the RF capacitors. The AlTaOx MIM capacitor technology was found to be suitable for high speed precision circuits operating in the RF regime.

Original languageEnglish
Pages (from-to)507-510
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
DOIs
StatePublished - 18 Aug 2003
Event2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
Duration: 8 Jun 200313 Jun 2003

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