High density Ni nanocrystals formed by coevaporating Ni and SiO2 pellets for the nonvolatile memory device application

Chih Wei Hu*, Ting Chang Chang, Chun Hao Tu, Yu Hao Huang, Chao Cheng Lin, Min Chen Chen, Fon Shan Huang, Simon M. Sze, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO2 pellets. An 800°C rapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5× 1012 cm-2. Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance-voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO 2 dielectric layer. Moreover, related reliability characteristics have been extracted.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number3
DOIs
StatePublished - 28 Jan 2010

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