High density NAND EEPROM with block-page programming for microcomputer applications

Masaki Momodomi*, Yoshihisa Iwata, Tomoharu Tanaka, Yasuo Itoh, Shirota Riichiro, Fujio Masuoka

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


A 5-V-only 4-Mb NAND EEPROM (electrically erasable programmable read-only memory) has been successfully developed. The EEPROM has on-chip high-voltage generators, so the system needs only a 5-V power supply. The block-page erase/program mode realizes high-speed programming. On-chip test circuits provide high reliability. The NAND EEPROM has many applications for compact microcomputer systems, which need large storage systems with low power consumption.

Original languageEnglish
JournalProceedings of the Custom Integrated Circuits Conference
StatePublished - 1 May 1989
EventProceedings of the IEEE 1989 Custom Integrated Circuits Conference - San Diego, CA, SA
Duration: 15 May 198918 May 1989

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