High-density MIM capacitors with HfO 2 dielectrics

Tsu Hsiu Perng*, Chao-Hsin Chien, Ching Wei Chen, Peer Lehnen, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Metal-insulator-metal (MIM) capacitors with high-k HfO 2 dielectrics were fabricated and investigated. Experimental results show low leakage current densities of ∼5 × 10 -9 A/cm 2 and high capacitance density of ∼3.4 fF/μm 2 at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO 2 MIM capacitors to be Poole-Frenkel-type conduction mechanism.

Original languageEnglish
Pages (from-to)345-349
Number of pages5
JournalThin Solid Films
Volume469-470
Issue numberSPEC. ISS.
DOIs
StatePublished - 22 Dec 2004

Keywords

  • Dielectrics
  • HfO
  • MIM capacitors

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