High-density MIM capacitors with HfO 2 dielectrics

Tsu Hsiu Perng; Chao-Hsin Chien; Ching Wei Chen; Peer Lehnen; Chun Yen Chang

doi:10.1016/j.tsf.2004.08.148

High-density MIM capacitors with HfO ₂ dielectrics

Tsu Hsiu Perng^*, Chao-Hsin Chien, Ching Wei Chen, Peer Lehnen, Chun Yen Chang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Metal-insulator-metal (MIM) capacitors with high-k HfO ₂ dielectrics were fabricated and investigated. Experimental results show low leakage current densities of ∼5 × 10 ^-9 A/cm ² and high capacitance density of ∼3.4 fF/μm ² at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO ₂ MIM capacitors to be Poole-Frenkel-type conduction mechanism.

Original language	English
Pages (from-to)	345-349
Number of pages	5
Journal	Thin Solid Films
Volume	469-470
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2004.08.148
State	Published - 22 Dec 2004

Keywords

Dielectrics
HfO
MIM capacitors

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@article{b3df2431b92e4b90ba85d9efe59b964b,

title = "High-density MIM capacitors with HfO 2 dielectrics",

abstract = " Metal-insulator-metal (MIM) capacitors with high-k HfO 2 dielectrics were fabricated and investigated. Experimental results show low leakage current densities of ∼5 × 10 -9 A/cm 2 and high capacitance density of ∼3.4 fF/μm 2 at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO 2 MIM capacitors to be Poole-Frenkel-type conduction mechanism.",

keywords = "Dielectrics, HfO, MIM capacitors",

author = "Perng, {Tsu Hsiu} and Chao-Hsin Chien and Chen, {Ching Wei} and Peer Lehnen and Chang, {Chun Yen}",

year = "2004",

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day = "22",

doi = "10.1016/j.tsf.2004.08.148",

language = "English",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - High-density MIM capacitors with HfO 2 dielectrics

AU - Perng, Tsu Hsiu

AU - Chien, Chao-Hsin

AU - Chen, Ching Wei

AU - Lehnen, Peer

AU - Chang, Chun Yen

PY - 2004/12/22

Y1 - 2004/12/22

N2 - Metal-insulator-metal (MIM) capacitors with high-k HfO 2 dielectrics were fabricated and investigated. Experimental results show low leakage current densities of ∼5 × 10 -9 A/cm 2 and high capacitance density of ∼3.4 fF/μm 2 at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO 2 MIM capacitors to be Poole-Frenkel-type conduction mechanism.

AB - Metal-insulator-metal (MIM) capacitors with high-k HfO 2 dielectrics were fabricated and investigated. Experimental results show low leakage current densities of ∼5 × 10 -9 A/cm 2 and high capacitance density of ∼3.4 fF/μm 2 at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO 2 MIM capacitors to be Poole-Frenkel-type conduction mechanism.

KW - Dielectrics

KW - HfO

KW - MIM capacitors

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U2 - 10.1016/j.tsf.2004.08.148

DO - 10.1016/j.tsf.2004.08.148

M3 - Article

AN - SCOPUS:10044220766

VL - 469-470

SP - 345

EP - 349

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - SPEC. ISS.