High-density MIM capacitors using AlTaOx dielectrics

M. Y. Yang*, C. H. Huang, Albert Chin, Chunxiang Zhu, M. F. Li, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalArticle

27 Scopus citations


The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/μm2 using high-κ AlTaOx fabricated at 400°C. In addition, small voltage dependence of capacitance of < 600 ppm (quadratic voltage coefficient of only 130 ppm/V2) is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-κ AlTaOx MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.

Original languageEnglish
Pages (from-to)306-308
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
StatePublished - 1 May 2003


  • Capacitor
  • Dielectric constant
  • Frequency dependence
  • High κ
  • MIM
  • RF

Fingerprint Dive into the research topics of 'High-density MIM capacitors using AlTaO<sub>x</sub> dielectrics'. Together they form a unique fingerprint.

  • Cite this

    Yang, M. Y., Huang, C. H., Chin, A., Zhu, C., Li, M. F., & Kwong, D. L. (2003). High-density MIM capacitors using AlTaOx dielectrics. IEEE Electron Device Letters, 24(5), 306-308. https://doi.org/10.1109/LED.2003.812572