High-density MIM capacitors using Al 2O 3 and AlTiO x dielectrics

S. B. Chen*, C. H. Lai, Albert Chin, J. C. Hsieh, J. Liu

*Corresponding author for this work

Research output: Contribution to journalArticle

152 Scopus citations

Abstract

We have investigated the electrical characteristics of Al 2O 3 and AlTiO x MIM capacitors from IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 μF/cm 2 are obtained for Al 2O 3 and AlTiO x MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiO x MIM capacitor has very large capacitance reduction as increasing frequencies. In contrast, good device integrity has been obtained for Al 2O 3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent.

Original languageEnglish
Pages (from-to)185-187
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number4
DOIs
StatePublished - 1 Apr 2002

Keywords

  • Capacitor
  • Dielectric constant
  • Frequency dependence
  • High k
  • MIM
  • RF

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