Abstract
We report Ir/TiO 2 /TaN metal-insulator-metal capacitors processed at only 300°C, which show a capacitance density of 28 fF/ μm 2 and a leakage current of 3 × 10 -8 (25 °C) or 6 × 10-7 (125 °C) A/cm 2 at -1 V. This performance is due to the combined effects of 300 °C nanocrystallized high-κ TiO 2 , a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.
Original language | English |
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Pages (from-to) | 845-847 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 29 |
Issue number | 8 |
DOIs | |
State | Published - 1 Aug 2008 |
Keywords
- High κ
- Ir
- Metal-insulator-metal (MIM)
- TiO