High density and low leakage current in TiO 2 MIM capacitors processed at 300°C

C. H. Cheng*, S. H. Lin, K. Y. Jhou, W. J. Chen, C. P. Chou, F. S. Yeh, Jim Hu, M. Hwang, T. Arikado, Sean P. McAlister, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

60 Scopus citations


We report Ir/TiO 2 /TaN metal-insulator-metal capacitors processed at only 300°C, which show a capacitance density of 28 fF/ μm 2 and a leakage current of 3 × 10 -8 (25 °C) or 6 × 10-7 (125 °C) A/cm 2 at -1 V. This performance is due to the combined effects of 300 °C nanocrystallized high-κ TiO 2 , a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.

Original languageEnglish
Pages (from-to)845-847
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - 1 Aug 2008


  • High κ
  • Ir
  • Metal-insulator-metal (MIM)
  • TiO

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