High-density (4.4F 2 ) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering

F. Arai*, N. Arai, S. Satoh, T. Yaegashi, E. Kamiya, Y. Matsunaga, Y. Takeuchi, H. Kamata, A. Shimizu, N. Ohtani, N. Kai, S. Takahashi, W. Moriyama, K. Kugimiya, S. Miyazaki, T. Hirose, H. Meguro, K. Hatakeyama, K. Shimizu, Shirota Riichiro

*Corresponding author for this work

Research output: Contribution to journalConference article

13 Scopus citations


This paper describes a novel high-density 4.4F 2 (F: feature size) NAND flash memory with the cell size of O.074um 2 for O.13um design rule. To minimize the cell size, two key technologies are introduced as follows. (1) The Super-Shallow Channel Profile (SSCP) engineering and (2) a novel layout of the NAND string that consists of 32 cells. The NAND cells fabricated by the above technologies have demonstrated good cell characteristics. This 4.4F 2 NAND flash technology is highly advantageous for low cost flash memories of 4Gbit and beyond for mass storage applications.

Original languageEnglish
Pages (from-to)775-778
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 2000
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 10 Dec 200013 Dec 2000

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    Arai, F., Arai, N., Satoh, S., Yaegashi, T., Kamiya, E., Matsunaga, Y., Takeuchi, Y., Kamata, H., Shimizu, A., Ohtani, N., Kai, N., Takahashi, S., Moriyama, W., Kugimiya, K., Miyazaki, S., Hirose, T., Meguro, H., Hatakeyama, K., Shimizu, K., & Riichiro, S. (2000). High-density (4.4F 2 ) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering. Technical Digest - International Electron Devices Meeting, 775-778. https://doi.org/10.1109/IEDM.2000.904432