High-density (4.4F 2 ) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering

F. Arai*, N. Arai, S. Satoh, T. Yaegashi, E. Kamiya, Y. Matsunaga, Y. Takeuchi, H. Kamata, A. Shimizu, N. Ohtani, N. Kai, S. Takahashi, W. Moriyama, K. Kugimiya, S. Miyazaki, T. Hirose, H. Meguro, K. Hatakeyama, K. Shimizu, Shirota Riichiro

*Corresponding author for this work

Research output: Contribution to journalConference article

13 Scopus citations

Abstract

This paper describes a novel high-density 4.4F 2 (F: feature size) NAND flash memory with the cell size of O.074um 2 for O.13um design rule. To minimize the cell size, two key technologies are introduced as follows. (1) The Super-Shallow Channel Profile (SSCP) engineering and (2) a novel layout of the NAND string that consists of 32 cells. The NAND cells fabricated by the above technologies have demonstrated good cell characteristics. This 4.4F 2 NAND flash technology is highly advantageous for low cost flash memories of 4Gbit and beyond for mass storage applications.

Original languageEnglish
Pages (from-to)775-778
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 2000
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 10 Dec 200013 Dec 2000

Fingerprint Dive into the research topics of 'High-density (4.4F <sup>2</sup> ) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering'. Together they form a unique fingerprint.

  • Cite this

    Arai, F., Arai, N., Satoh, S., Yaegashi, T., Kamiya, E., Matsunaga, Y., Takeuchi, Y., Kamata, H., Shimizu, A., Ohtani, N., Kai, N., Takahashi, S., Moriyama, W., Kugimiya, K., Miyazaki, S., Hirose, T., Meguro, H., Hatakeyama, K., Shimizu, K., & Riichiro, S. (2000). High-density (4.4F 2 ) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering. Technical Digest - International Electron Devices Meeting, 775-778. https://doi.org/10.1109/IEDM.2000.904432