This paper describes a novel high-density 4.4F 2 (F: feature size) NAND flash memory with the cell size of O.074um 2 for O.13um design rule. To minimize the cell size, two key technologies are introduced as follows. (1) The Super-Shallow Channel Profile (SSCP) engineering and (2) a novel layout of the NAND string that consists of 32 cells. The NAND cells fabricated by the above technologies have demonstrated good cell characteristics. This 4.4F 2 NAND flash technology is highly advantageous for low cost flash memories of 4Gbit and beyond for mass storage applications.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2000|
|Event||2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States|
Duration: 10 Dec 2000 → 13 Dec 2000