High-Current Snapback Characteristics of MOSFET’s

Y. Fong, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The high-current snapback characteristics of MOSFET’s with different channel lengths and widths, gate oxide thicknesses, and substrate dopings were studied to determine their effectiveness in electrostatic discharge stress protection. Filamentary conduction was not observed for currents up to 7 mA/um of channel width for a pulse-width of 500 ns. MOSFET’s with shorter channel lengths require lower voltages to sustain the same current, independent of gate oxide thickness. Increasing the substrate doping does not necessarily reduce the high current voltage. These trends can be explained using a simple lateral n-p-n bipolar transistor snapback model.

Original languageEnglish
Pages (from-to)2101-2103
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume37
Issue number9
DOIs
StatePublished - 1 Jan 1990

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