High-current-drive dual-gate a-IGZO TFT with nanometer dotlike doping

Chun Hung Liao, Chang Hung Li, Hsiao-Wen Zan, Hsin-Fei Meng, Chuang Chuang Tsai

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

In this letter, we use a dual-gate (DG) structure together with nanometer dotlike doping (NDD) in active channel to produce a-IGZO thin-film transistors with very high current drive. With DG operation, the output current increases from 0.14 mA of the conventional device to 0.76 mA of the NDD device. The enhanced lateral field and improved carrier accumulation in DG operation may explain the significantly enlarged drive current. Particularly, simulated electron distribution reveals that high carrier concentration is induced under NDD regions in DG operation. The device without NDD, however, does not exhibit improved drive current in DG operation.

Original languageEnglish
Article number6587475
Pages (from-to)1274-1276
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number10
DOIs
StatePublished - 2 Sep 2013

Keywords

  • a-IGZO thin-film transistor (TFT)
  • dot doping
  • double gate
  • dual gate (DG)
  • oxide thin-film transistor

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