High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-micron complementary metal oxide semiconductor technology

Ming-Dou Ker*, Chyh Yih Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Polysilicon diodes used in sub-quarter-micron complementary metal oxide semiconductor (CMOS) technologies are characterized by transmission line pulse (TLP) measurement to investigate device characteristics in a high-current regime. The second-breakdown current (It2) of the polysilicon diode shows good linear dependence on the device junction perimeter. When the polysilicon diodes are connected in a stacked configuration for reducing parasitic capacitance, the stacked polysilicon diodes show no degradation in electrostatic discharge (ESD) robustness compared with a single polysilicon diode. Such CMOS process-compatible polysilicon diodes have been successfully used as on-chip ESD protection devices for GHz radio-frequency (RF) circuits.

Original languageEnglish
Pages (from-to)3377-3378
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number6 A
DOIs
StatePublished - 1 Jun 2003

Keywords

  • Electrostatic discharge (ESD)
  • Parasitic capacitance
  • Polysilicon diode
  • Radio frequency (RF)
  • Substrate noise

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