High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications

Shao Ming Yang*, Jiun Jia Huango, Chao-Hsin Chien, Pei Jer Taeng, Lurng Shehng Lee, Ming Jinn Tsai, Tan Fu Lei

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.

Original languageEnglish
Title of host publication2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages48-49
Number of pages2
DOIs
StatePublished - 14 Aug 2008
Event2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan
Duration: 21 Apr 200823 Apr 2008

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
CountryTaiwan
CityHsinchu
Period21/04/0823/04/08

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