High capacity memory using oxide based Schottky diode and unipolar resistive array

Yang Shun Fan, Chih Hsiang Chang, Guang Ting Zheng, Che Chia Chang, Po-Tsun Liu

Research output: Contribution to journalConference article

Abstract

The Al-doped zinc tin oxide based Schottky diode and resistive switching memory (RRAM) were demonstrated. Thanks to the significant improvement on the forward-bias current of proposed AZTO-based Schottky diode by post-deposition annealing, the integration of one diode and one resistor (1D1R) configuration through the SPICE simulation was achieved. Furthermore, the read margin analysis of feasible array size was carried out and 9.4k bits array can be realized by anti-crosstalk properties of the AZTO-based 1D1R devices.

Original languageEnglish
Pages (from-to)1213-1216
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume46
Issue number1
DOIs
StatePublished - 1 Jun 2015
Event2015 SID International Symposium - San Jose, United States
Duration: 4 Jun 2015 → …

Keywords

  • AZTO
  • RRAM
  • Read margin
  • Resistive switching
  • Schottky diode

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