High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

Sun Jung Kim*, Byung Jin Cho, M. B. Yu, M. F. Li, Y. Z. Xiong, C. Zhu, Albert Chin, D. L. Kwong

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

32 Scopus citations

Abstract

MIM capacitor with niobium pentoxide (Nb2O2) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb2O5 MIM with HfO 2/Al2O3 barriers delivers a record high capacitance density >17 fF/μm2 with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.

Original languageEnglish
Article number1469210
Pages (from-to)56-57
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Volume2005
DOIs
StatePublished - 1 Dec 2005
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: 14 Jun 200514 Jun 2005

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