MIM capacitor with niobium pentoxide (Nb2O2) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb2O5 MIM with HfO 2/Al2O3 barriers delivers a record high capacitance density >17 fF/μm2 with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Dec 2005|
|Event||2005 Symposium on VLSI Technology - Kyoto, Japan|
Duration: 14 Jun 2005 → 14 Jun 2005