High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scattering layers

Chia En Lee*, Yea Chen Lee, Hao-Chung Kuo, Tien-chang Lu, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The flip-chip light-emitting diodes (FC-LEDs) with triple-light scattering layers were investigated comprising a top surface sapphire textured layer, an interface patterned sapphire layer, and a bottom naturally textured p-GaN layer. Such triple-textured layers are useful for light extraction efficiency enhancement. The light output power of FC-LEDs was increased 60% (at 350-mA current injection) compared to that of conventional FC-LEDs by implementing the triple-light scattering layers.

Original languageEnglish
Article number4476456
Pages (from-to)659-661
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number8
DOIs
StatePublished - 15 Apr 2008

Keywords

  • Flip-chip light-emitting diodes (FC-LEDs)
  • Naturally textured p-GaN layer
  • Patterned sapphire
  • Sapphire textured layer
  • Triple-light scattering layers

Fingerprint Dive into the research topics of 'High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scattering layers'. Together they form a unique fingerprint.

Cite this