High breakdown p-channel insb mosfet

S. L. Tu*, W. H. Lan, T. S. Chiou, S. J. Yang, Kai-Feng Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

P-channel InSb MOSFET is fabricated by anodic oxidation and SiO evaporation for the MOS gate structure and by Cd diffusion for the source and drain. A breakdown voltage exceeding 11 V is obtained in the drain junction, which renders the drain current saturation fully observable. An on-off ratio of 104 in the drain current is also obtained, indicating that the present InSb MOSFET is useful for a good switching operation.

Original languageEnglish
Pages (from-to)L398-L400
JournalJapanese Journal of Applied Physics
Volume29
Issue number3
DOIs
StatePublished - 1 Jan 1990

Keywords

  • Lnsb p-n junction
  • MOSFET

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