High-bandwidth OEIC receivers using heterojunction bipolar transistors. Design and demonstration

K. D. Pedrotti*, R. L. Pierson, N. H. Sheng, R. B. Nubling, C. W. Farley, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The design. fabrication and performance of the highest speed optoelectronic integrated circuit (OEIC) receivers reported to date is presented. These consist of PIN detectors and AlGaAs/GaAs HBT transistors fabricated on the same GaAs substrate. The p-i-n detectors are made from the same base and collector epitaxial layers as used for the HBT transistors and are completely compatible with our usual transistor fabrication process: no process alteration was required. We report 20-μm detectors with 35.6% quantum efficiency, 40 na dark current at -3 V bias, and a bandwidth in excess of 17 GHz. These detectors are used to produce two OEIC receivers, one with a bandwidth of 6.7 GHz and an equivalent input noise current of4.3 pA/Hz 1/2 and another bandwidth of 13 GHz and an equivalent input noise current of 10 pA/Hz 1/2 . the performance of a variety of circuit topologies is compared and the effect of different epitaxial layer structures on OEIC performance is investigated.

Original languageEnglish
Pages (from-to)1601-1614
Number of pages14
JournalJournal of Lightwave Technology
Volume11
Issue number10
DOIs
StatePublished - 1 Oct 1993

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