The design. fabrication and performance of the highest speed optoelectronic integrated circuit (OEIC) receivers reported to date is presented. These consist of PIN detectors and AlGaAs/GaAs HBT transistors fabricated on the same GaAs substrate. The p-i-n detectors are made from the same base and collector epitaxial layers as used for the HBT transistors and are completely compatible with our usual transistor fabrication process: no process alteration was required. We report 20-μm detectors with 35.6% quantum efficiency, 40 na dark current at -3 V bias, and a bandwidth in excess of 17 GHz. These detectors are used to produce two OEIC receivers, one with a bandwidth of 6.7 GHz and an equivalent input noise current of4.3 pA/Hz 1/2 and another bandwidth of 13 GHz and an equivalent input noise current of 10 pA/Hz 1/2 . the performance of a variety of circuit topologies is compared and the effect of different epitaxial layer structures on OEIC performance is investigated.