High-Bandwidth Green Semipolar (20-21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communication

Sung-Wen Huang Chen, Yu-Ming Huang, Yun-Han Chang, Yue Lin, Fang-Jyun Liou, Yu-Chien Hsu, Jie Song, Joowon Choi, Chi Wai Chow, Chien-Chung Lin, Ray-Hua Horng, Zhong Chen, Jung Han, Tingzhu Wu, Hao-Chung Kuo

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7 Scopus citations

Abstract

The light-emitting diode (LED) is among promising candidates of light sources in visible light communication (VLC); however, strong internal polarization fields in common c-plane LEDs, especially green LEDs, result in low frequency and limited transmission performance. This study aims to overcome the limited 3-dB bandwidth of long-wavelength InGaN/GaN LEDs. Thus, semipolar (20-21) micro-LEDs (mu LEDs) were fabricated through several improved approaches on epitaxy and chip processes. The mu LED exhibits a 525 nm peak wavelength and good polarization performance. The highest 3-dB bandwidth up to 756 MHz and 1.5 Gbit/s data rate was achieved under a current density of 2.0 kA/cm(2). These results suggest a good transmission capacity of green semipolar (20-21) mu LEDs in VLC applications.

Original languageEnglish
Pages (from-to)2228-2235
Number of pages8
JournalACS Photonics
Volume7
Issue number8
DOIs
StatePublished - 19 Aug 2020

Keywords

  • semipolar GaN
  • micro light-emitting diode
  • visible light communication
  • high bandwidth
  • HIGH-EFFICIENCY
  • POLARIZATION
  • FIELDS
  • LEDS

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