High aspect ratio nickel structures fabricated by electrochemical replication of hydrofluoric acid etched silicon

Xi Zhang*, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

A technique for fabricating free-standing, high-aspect-ratio porous and pillar-type Ni structures has been developed using wet Si processing. A wafer of (100) Si was initially etched in HF solution to form deep pores with micron-sized diameter. The aspect ratio can exceed 200. By introducing the as-etched Si into a defined aqueous Ni2+ solution, Ni deposits grew rapidly onto the sidewalls and replaced the Si. Long-time immersion allows the Si sidewalls to be completely converted and thus form a metallic Ni structure with high-aspect-ratio pores. It is known that close-packed submicron Si pillars can be formed by oxidizing and subsequent etching of the macropore sidewalls. Treated in the same Ni solution, high-aspect-ratio Ni pillars were correspondingly emerged by replicating the original pillar-type Si structure.

Original languageEnglish
Pages391-397
Number of pages7
StatePublished - 6 Oct 2006
Event2006 TMS Annual Meeting - San Antonio, TX, United States
Duration: 12 Mar 200616 Mar 2006

Conference

Conference2006 TMS Annual Meeting
CountryUnited States
CitySan Antonio, TX
Period12/03/0616/03/06

Keywords

  • High-aspect-ratio Ni structures
  • Macroporous Si
  • Single-step replication

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    Zhang, X., & Tu, K-N. (2006). High aspect ratio nickel structures fabricated by electrochemical replication of hydrofluoric acid etched silicon. 391-397. Paper presented at 2006 TMS Annual Meeting, San Antonio, TX, United States.