High-κEu2O3 and Y2O3 poly-Si thin-film transistor nonvolatile memory devices

Tung Ming Pan, Li Chen Yen, Sheng Hao Huang, Chieh Ting Lo, Tien-Sheng Chao

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

In this paper, we have successfully fabricated low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT) nonvolatile memory devices employing high-κEu2O3 and Y 2O3 films as the charge trapping layer. The LTPS-TFT memory device uses band-to-band tunneling-induced hot hole injection and gate Fowler-Nordheim injection as the program and erase methods, respectively. Compared with the Y2O3 film, the LTPS-TFT memory device using an Eu2O3 charge-trapping layer exhibited a lower subthreshold swing and a larger memory window, a smaller charge loss, and a better endurance performance, presumably because of the higher charge-trapping efficiency of the Eu2O3 film.

Original languageEnglish
Article number6523940
Pages (from-to)2251-2255
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume60
Issue number7
DOIs
StatePublished - 15 Jul 2013

Keywords

  • Charge-trapping layer
  • EuO
  • low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT)
  • YO

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