High-κ Ir/TiTaO/TaN capacitors suitable for analog IC applications

K. C. Chiang*, C. C. Huang, Albert Chin, W. J. Chen, S. P. McAlister, H. F. Chiu, Jiann Ruey Chen, C. C. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

We have developed novel high-K Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/μm 2 ), small leakage current at 2 V (1.2 × 10 -8 A/cm 2 ), and low voltage linearity of the capacitance (89 ppm/V 2 ). These excellent results meet the ITRS roadmap requirements for precision analog capacitors for the year 2018. The good performance is due to the very high (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode.

Original languageEnglish
Pages (from-to)504-506
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number7
DOIs
StatePublished - 1 Jul 2005

Keywords

  • Analog
  • Ir
  • ITRS
  • MIM
  • TiTaO

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