@inproceedings{4860e38c94ff4812ad574f29990b5882,
title = "High-κ HfO2/TiO2/HfO2 multilayer quantum well flash memory devices",
abstract = "High-κ HfO2/TiO2/HfO2 multilayer quantum well (MQW) charge storage devices with a large memory window of ΔVt≈8.1V, an excellent endurance and a good retention (∼9% charge loss at 20&C) are reported. Both program and erase speeds of ΔVt>3V@100μs are achieved for memory transistors under channel hot carrier injections. Furthermore, quantum well memory capacitors with high-κ Al2O3 as a blocking oxide and high work function metal gate show low leakage current density of ∼2.4×10 -7A/cm2@Vg=-5V at 125°C and high program/erase speed of ΔVFB>2V@10μs with a low operation voltage of Vg<5V.",
author = "S. Maikap and Tzeng, {P. J.} and Tseng, {S. S.} and Wang, {T. Y.} and Lin, {C. H.} and Lee, {H. Y.} and Wang, {C. C.} and Tien, {T. C.} and Lee, {L. S.} and Pei-Wen Li and Yang, {J. R.} and Tsai, {M. J.}",
year = "2007",
month = sep,
day = "26",
doi = "10.1109/VTSA.2007.378900",
language = "English",
isbn = "1424405858",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
booktitle = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers",
note = "null ; Conference date: 23-04-2007 Through 25-04-2007",
}