High-κ HfO2/TiO2/HfO2 multilayer quantum well (MQW) charge storage devices with a large memory window of ΔVt≈8.1V, an excellent endurance and a good retention (∼9% charge loss at 20&C) are reported. Both program and erase speeds of ΔVt>3V@100μs are achieved for memory transistors under channel hot carrier injections. Furthermore, quantum well memory capacitors with high-κ Al2O3 as a blocking oxide and high work function metal gate show low leakage current density of ∼2.4×10 -7A/cm2@Vg=-5V at 125°C and high program/erase speed of ΔVFB>2V@10μs with a low operation voltage of Vg<5V.
|Title of host publication||2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers|
|State||Published - 26 Sep 2007|
|Event||2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan|
Duration: 23 Apr 2007 → 25 Apr 2007
|Name||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|Conference||2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA|
|Period||23/04/07 → 25/04/07|