High-κ HfO2/TiO2/HfO2 multilayer quantum well flash memory devices

S. Maikap*, P. J. Tzeng, S. S. Tseng, T. Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang, T. C. Tien, L. S. Lee, Pei-Wen Li, J. R. Yang, M. J. Tsai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

High-κ HfO2/TiO2/HfO2 multilayer quantum well (MQW) charge storage devices with a large memory window of ΔVt≈8.1V, an excellent endurance and a good retention (∼9% charge loss at 20&C) are reported. Both program and erase speeds of ΔVt>3V@100μs are achieved for memory transistors under channel hot carrier injections. Furthermore, quantum well memory capacitors with high-κ Al2O3 as a blocking oxide and high work function metal gate show low leakage current density of ∼2.4×10 -7A/cm2@Vg=-5V at 125°C and high program/erase speed of ΔVFB>2V@10μs with a low operation voltage of Vg<5V.

Original languageEnglish
Title of host publication2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
DOIs
StatePublished - 26 Sep 2007
Event2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan
Duration: 23 Apr 200725 Apr 2007

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
CountryTaiwan
CityHsinchu
Period23/04/0725/04/07

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