High-κ HfO2/TiO2/HfO2 multilayer quantum well flash memory devices

S. Maikap; P. J. Tzeng; S. S. Tseng; T. Y. Wang; C. H. Lin; H. Y. Lee; C. C. Wang; T. C. Tien; L. S. Lee; Pei-Wen Li; J. R. Yang; M. J. Tsai

doi:10.1109/VTSA.2007.378900

High-κ HfO₂/TiO₂/HfO₂ multilayer quantum well flash memory devices

S. Maikap^*, P. J. Tzeng, S. S. Tseng, T. Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang, T. C. Tien, L. S. Lee, Pei-Wen Li, J. R. Yang, M. J. Tsai

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

High-κ HfO₂/TiO₂/HfO₂ multilayer quantum well (MQW) charge storage devices with a large memory window of ΔV_t≈8.1V, an excellent endurance and a good retention (∼9% charge loss at 20&C) are reported. Both program and erase speeds of ΔV_t>3V@100μs are achieved for memory transistors under channel hot carrier injections. Furthermore, quantum well memory capacitors with high-κ Al₂O₃ as a blocking oxide and high work function metal gate show low leakage current density of ∼2.4×10 ^-7A/cm²@V_g=-5V at 125°C and high program/erase speed of ΔV_FB>2V@10μs with a low operation voltage of V_g<5V.

Original language	English
Title of host publication	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VTSA.2007.378900
State	Published - 26 Sep 2007
Event	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan Duration: 23 Apr 2007 → 25 Apr 2007

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country	Taiwan
City	Hsinchu
Period	23/04/07 → 25/04/07

Access to Document

10.1109/VTSA.2007.378900

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Maikap, S., Tzeng, P. J., Tseng, S. S., Wang, T. Y., Lin, C. H., Lee, H. Y., Wang, C. C., Tien, T. C., Lee, L. S., Li, P-W., Yang, J. R., & Tsai, M. J. (2007). High-κ HfO₂/TiO₂/HfO₂ multilayer quantum well flash memory devices. In 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers [4239468] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2007.378900

Maikap, S. ; Tzeng, P. J. ; Tseng, S. S. ; Wang, T. Y. ; Lin, C. H. ; Lee, H. Y. ; Wang, C. C. ; Tien, T. C. ; Lee, L. S. ; Li, Pei-Wen ; Yang, J. R. ; Tsai, M. J. / High-κ HfO₂/TiO₂/HfO₂ multilayer quantum well flash memory devices. 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{4860e38c94ff4812ad574f29990b5882,

title = "High-κ HfO2/TiO2/HfO2 multilayer quantum well flash memory devices",

abstract = "High-κ HfO2/TiO2/HfO2 multilayer quantum well (MQW) charge storage devices with a large memory window of ΔVt≈8.1V, an excellent endurance and a good retention (∼9% charge loss at 20&C) are reported. Both program and erase speeds of ΔVt>3V@100μs are achieved for memory transistors under channel hot carrier injections. Furthermore, quantum well memory capacitors with high-κ Al2O3 as a blocking oxide and high work function metal gate show low leakage current density of ∼2.4×10 -7A/cm2@Vg=-5V at 125°C and high program/erase speed of ΔVFB>2V@10μs with a low operation voltage of Vg<5V.",

author = "S. Maikap and Tzeng, {P. J.} and Tseng, {S. S.} and Wang, {T. Y.} and Lin, {C. H.} and Lee, {H. Y.} and Wang, {C. C.} and Tien, {T. C.} and Lee, {L. S.} and Pei-Wen Li and Yang, {J. R.} and Tsai, {M. J.}",

year = "2007",

month = sep,

day = "26",

doi = "10.1109/VTSA.2007.378900",

language = "English",

isbn = "1424405858",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

booktitle = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers",

note = "null ; Conference date: 23-04-2007 Through 25-04-2007",

}

Maikap, S, Tzeng, PJ, Tseng, SS, Wang, TY, Lin, CH, Lee, HY, Wang, CC, Tien, TC, Lee, LS, Li, P-W, Yang, JR & Tsai, MJ 2007, High-κ HfO₂/TiO₂/HfO₂ multilayer quantum well flash memory devices. in 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers., 4239468, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, 23/04/07. https://doi.org/10.1109/VTSA.2007.378900

High-κ HfO₂/TiO₂/HfO₂ multilayer quantum well flash memory devices. / Maikap, S.; Tzeng, P. J.; Tseng, S. S.; Wang, T. Y.; Lin, C. H.; Lee, H. Y.; Wang, C. C.; Tien, T. C.; Lee, L. S.; Li, Pei-Wen; Yang, J. R.; Tsai, M. J.

2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239468 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-κ HfO2/TiO2/HfO2 multilayer quantum well flash memory devices

AU - Maikap, S.

AU - Tzeng, P. J.

AU - Tseng, S. S.

AU - Wang, T. Y.

AU - Lin, C. H.

AU - Lee, H. Y.

AU - Wang, C. C.

AU - Tien, T. C.

AU - Lee, L. S.

AU - Li, Pei-Wen

AU - Yang, J. R.

AU - Tsai, M. J.

PY - 2007/9/26

Y1 - 2007/9/26

N2 - High-κ HfO2/TiO2/HfO2 multilayer quantum well (MQW) charge storage devices with a large memory window of ΔVt≈8.1V, an excellent endurance and a good retention (∼9% charge loss at 20&C) are reported. Both program and erase speeds of ΔVt>3V@100μs are achieved for memory transistors under channel hot carrier injections. Furthermore, quantum well memory capacitors with high-κ Al2O3 as a blocking oxide and high work function metal gate show low leakage current density of ∼2.4×10 -7A/cm2@Vg=-5V at 125°C and high program/erase speed of ΔVFB>2V@10μs with a low operation voltage of Vg<5V.

AB - High-κ HfO2/TiO2/HfO2 multilayer quantum well (MQW) charge storage devices with a large memory window of ΔVt≈8.1V, an excellent endurance and a good retention (∼9% charge loss at 20&C) are reported. Both program and erase speeds of ΔVt>3V@100μs are achieved for memory transistors under channel hot carrier injections. Furthermore, quantum well memory capacitors with high-κ Al2O3 as a blocking oxide and high work function metal gate show low leakage current density of ∼2.4×10 -7A/cm2@Vg=-5V at 125°C and high program/erase speed of ΔVFB>2V@10μs with a low operation voltage of Vg<5V.

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U2 - 10.1109/VTSA.2007.378900

DO - 10.1109/VTSA.2007.378900

M3 - Conference contribution

AN - SCOPUS:34548832756

SN - 1424405858

SN - 9781424405855

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers

Y2 - 23 April 2007 through 25 April 2007

ER -

Maikap S, Tzeng PJ, Tseng SS, Wang TY, Lin CH, Lee HY et al. High-κ HfO₂/TiO₂/HfO₂ multilayer quantum well flash memory devices. In 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239468. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2007.378900