HfSiON n-MOSFETs using low-work function HfSiχ gate

C. H. Wu*, B. F. Hung, Albert Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


The authors have developed a novel high-temperature stable HfSiχgate for high-κ HfSiON gate dielectric. After a 1000 °C RTA, the HfSiχ/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm2/V · s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.

Original languageEnglish
Pages (from-to)762-764
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - 1 Sep 2006


  • HfSi
  • HfSiON
  • n-MOSFETs

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