Abstract
The authors have developed a novel high-temperature stable HfSiχgate for high-κ HfSiON gate dielectric. After a 1000 °C RTA, the HfSiχ/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm2/V · s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.
Original language | English |
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Pages (from-to) | 762-764 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 27 |
Issue number | 9 |
DOIs | |
State | Published - 1 Sep 2006 |
Keywords
- HfSi
- HfSiON
- n-MOSFETs