HfSiON n-MOSFETs using low-work function HfSiχ gate

C. H. Wu; B. F. Hung; Albert Chin; S. J. Wang; F. Y. Yen; Y. T. Hou; Y. Jin; H. J. Tao; S. C. Chen; M. S. Liang

doi:10.1109/LED.2006.880659

HfSiON n-MOSFETs using low-work function HfSi_χ gate

C. H. Wu^*, B. F. Hung, Albert Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article

7 Scopus citations

Abstract

The authors have developed a novel high-temperature stable HfSi_χgate for high-κ HfSiON gate dielectric. After a 1000 °C RTA, the HfSi_χ/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm²/V · s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.

Original language	English
Pages (from-to)	762-764
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	9
DOIs	https://doi.org/10.1109/LED.2006.880659
State	Published - 1 Sep 2006

Keywords

HfSi
HfSiON
n-MOSFETs

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10.1109/LED.2006.880659

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Wu, C. H., Hung, B. F., Chin, A., Wang, S. J., Yen, F. Y., Hou, Y. T., Jin, Y., Tao, H. J., Chen, S. C., & Liang, M. S. (2006). HfSiON n-MOSFETs using low-work function HfSi_χ gate. IEEE Electron Device Letters, 27(9), 762-764. https://doi.org/10.1109/LED.2006.880659

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title = "HfSiON n-MOSFETs using low-work function HfSiχ gate",

abstract = "The authors have developed a novel high-temperature stable HfSiχgate for high-κ HfSiON gate dielectric. After a 1000 °C RTA, the HfSiχ/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm2/V · s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.",

keywords = "HfSi, HfSiON, n-MOSFETs",

author = "Wu, {C. H.} and Hung, {B. F.} and Albert Chin and Wang, {S. J.} and Yen, {F. Y.} and Hou, {Y. T.} and Y. Jin and Tao, {H. J.} and Chen, {S. C.} and Liang, {M. S.}",

year = "2006",

month = sep,

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doi = "10.1109/LED.2006.880659",

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AU - Wu, C. H.

AU - Hung, B. F.

AU - Chin, Albert

AU - Wang, S. J.

AU - Yen, F. Y.

AU - Hou, Y. T.

AU - Jin, Y.

AU - Tao, H. J.

AU - Chen, S. C.

AU - Liang, M. S.

PY - 2006/9/1

Y1 - 2006/9/1

N2 - The authors have developed a novel high-temperature stable HfSiχgate for high-κ HfSiON gate dielectric. After a 1000 °C RTA, the HfSiχ/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm2/V · s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.

AB - The authors have developed a novel high-temperature stable HfSiχgate for high-κ HfSiON gate dielectric. After a 1000 °C RTA, the HfSiχ/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm2/V · s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.

KW - HfSi

KW - HfSiON

KW - n-MOSFETs

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DO - 10.1109/LED.2006.880659

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JO - IEEE Electron Device Letters

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