HfO2/AlN/In0.53Ga0.47As MOS devices electrical properties and reliability studies

Edward Yi Chang; Quang Ho Luc; Huy Binh Do; Po Chun Chang; Yueh Chin Lin

doi:10.1109/ICSICT.2016.7998834

HfO₂/AlN/In_0.53Ga_0.47As MOS devices electrical properties and reliability studies

Edward Yi Chang, Quang Ho Luc, Huy Binh Do, Po Chun Chang, Yueh Chin Lin

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this article, we demonstrate plasma-enhanced atomic layer deposition (PEALD) as an effective passivation technique to establish high interfacial quality of high-k/InGaAs structures. Performing PEALD-AlN as an interfacial passivation layer (IPL), excellent capacitance-voltage (C-V) characteristics have been achieved for the HfO₂/n, p-In0.53Ga0.47As MOSCAPs. The effects of AlN-IPL on the effective work function (EWF) of metal and band alignment of the HfO₂/AlN/In0.53Ga0.47As structure have also been investigated. In addition, the multilayer TiNi alloys were applied as gate dielectric for a suitable metal EWF with a small work function variation (WFV). A sub-nm equivalent oxide thickness (EOT) HfO₂/In0.53Ga0.47As MOS device with low density of interface states and low leakage current density was obtained utilizing AlN-IPL and post remote-plasma (PRP) gas as pre-and post-gate treatments in an in-situ ALD process. The device performance and reliability of HfO₂/In0.53Ga0.47As nMOSFETs with in-situ PEALD treatments have also been characterized.

Original language	English
Title of host publication	2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
Editors	Ru Huang, Ting-Ao Tang, Yu-Long Jiang
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	41-44
Number of pages	4
ISBN (Electronic)	9781467397179
DOIs	https://doi.org/10.1109/ICSICT.2016.7998834
State	Published - 31 Jul 2017
Event	13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China Duration: 25 Oct 2016 → 28 Oct 2016

Publication series

Name	2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Conference

Conference	13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
Country	China
City	Hangzhou
Period	25/10/16 → 28/10/16

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Chang, E. Y., Luc, Q. H., Do, H. B., Chang, P. C., & Lin, Y. C. (2017). HfO₂/AlN/In_0.53Ga_0.47As MOS devices electrical properties and reliability studies. In R. Huang, T-A. Tang, & Y-L. Jiang (Eds.), 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings (pp. 41-44). [7998834] (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2016.7998834

Chang, Edward Yi ; Luc, Quang Ho ; Do, Huy Binh ; Chang, Po Chun ; Lin, Yueh Chin. / HfO₂/AlN/In_0.53Ga_0.47As MOS devices electrical properties and reliability studies. 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings. editor / Ru Huang ; Ting-Ao Tang ; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 41-44 (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings).

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title = "HfO2/AlN/In0.53Ga0.47As MOS devices electrical properties and reliability studies",

abstract = "In this article, we demonstrate plasma-enhanced atomic layer deposition (PEALD) as an effective passivation technique to establish high interfacial quality of high-k/InGaAs structures. Performing PEALD-AlN as an interfacial passivation layer (IPL), excellent capacitance-voltage (C-V) characteristics have been achieved for the HfO2/n, p-In0.53Ga0.47As MOSCAPs. The effects of AlN-IPL on the effective work function (EWF) of metal and band alignment of the HfO2/AlN/In0.53Ga0.47As structure have also been investigated. In addition, the multilayer TiNi alloys were applied as gate dielectric for a suitable metal EWF with a small work function variation (WFV). A sub-nm equivalent oxide thickness (EOT) HfO2/In0.53Ga0.47As MOS device with low density of interface states and low leakage current density was obtained utilizing AlN-IPL and post remote-plasma (PRP) gas as pre-and post-gate treatments in an in-situ ALD process. The device performance and reliability of HfO2/In0.53Ga0.47As nMOSFETs with in-situ PEALD treatments have also been characterized.",

author = "Chang, {Edward Yi} and Luc, {Quang Ho} and Do, {Huy Binh} and Chang, {Po Chun} and Lin, {Yueh Chin}",

year = "2017",

month = jul,

day = "31",

doi = "10.1109/ICSICT.2016.7998834",

language = "English",

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Chang, EY, Luc, QH, Do, HB, Chang, PC & Lin, YC 2017, HfO₂/AlN/In_0.53Ga_0.47As MOS devices electrical properties and reliability studies. in R Huang, T-A Tang & Y-L Jiang (eds), 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings., 7998834, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 41-44, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016, Hangzhou, China, 25/10/16. https://doi.org/10.1109/ICSICT.2016.7998834

HfO₂/AlN/In_0.53Ga_0.47As MOS devices electrical properties and reliability studies. / Chang, Edward Yi; Luc, Quang Ho; Do, Huy Binh; Chang, Po Chun; Lin, Yueh Chin.

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings. ed. / Ru Huang; Ting-Ao Tang; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2017. p. 41-44 7998834 (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - HfO2/AlN/In0.53Ga0.47As MOS devices electrical properties and reliability studies

AU - Chang, Edward Yi

AU - Luc, Quang Ho

AU - Do, Huy Binh

AU - Chang, Po Chun

AU - Lin, Yueh Chin

PY - 2017/7/31

Y1 - 2017/7/31

N2 - In this article, we demonstrate plasma-enhanced atomic layer deposition (PEALD) as an effective passivation technique to establish high interfacial quality of high-k/InGaAs structures. Performing PEALD-AlN as an interfacial passivation layer (IPL), excellent capacitance-voltage (C-V) characteristics have been achieved for the HfO2/n, p-In0.53Ga0.47As MOSCAPs. The effects of AlN-IPL on the effective work function (EWF) of metal and band alignment of the HfO2/AlN/In0.53Ga0.47As structure have also been investigated. In addition, the multilayer TiNi alloys were applied as gate dielectric for a suitable metal EWF with a small work function variation (WFV). A sub-nm equivalent oxide thickness (EOT) HfO2/In0.53Ga0.47As MOS device with low density of interface states and low leakage current density was obtained utilizing AlN-IPL and post remote-plasma (PRP) gas as pre-and post-gate treatments in an in-situ ALD process. The device performance and reliability of HfO2/In0.53Ga0.47As nMOSFETs with in-situ PEALD treatments have also been characterized.

AB - In this article, we demonstrate plasma-enhanced atomic layer deposition (PEALD) as an effective passivation technique to establish high interfacial quality of high-k/InGaAs structures. Performing PEALD-AlN as an interfacial passivation layer (IPL), excellent capacitance-voltage (C-V) characteristics have been achieved for the HfO2/n, p-In0.53Ga0.47As MOSCAPs. The effects of AlN-IPL on the effective work function (EWF) of metal and band alignment of the HfO2/AlN/In0.53Ga0.47As structure have also been investigated. In addition, the multilayer TiNi alloys were applied as gate dielectric for a suitable metal EWF with a small work function variation (WFV). A sub-nm equivalent oxide thickness (EOT) HfO2/In0.53Ga0.47As MOS device with low density of interface states and low leakage current density was obtained utilizing AlN-IPL and post remote-plasma (PRP) gas as pre-and post-gate treatments in an in-situ ALD process. The device performance and reliability of HfO2/In0.53Ga0.47As nMOSFETs with in-situ PEALD treatments have also been characterized.

UR - http://www.scopus.com/inward/record.url?scp=85028641951&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2016.7998834

DO - 10.1109/ICSICT.2016.7998834

M3 - Conference contribution

AN - SCOPUS:85028641951

T3 - 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

SP - 41

EP - 44

BT - 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

A2 - Huang, Ru

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PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 25 October 2016 through 28 October 2016

ER -

Chang EY, Luc QH, Do HB, Chang PC, Lin YC. HfO₂/AlN/In_0.53Ga_0.47As MOS devices electrical properties and reliability studies. In Huang R, Tang T-A, Jiang Y-L, editors, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 41-44. 7998834. (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings). https://doi.org/10.1109/ICSICT.2016.7998834