HfO2/AlN/In0.53Ga0.47As MOS devices electrical properties and reliability studies

Edward Yi Chang, Quang Ho Luc, Huy Binh Do, Po Chun Chang, Yueh Chin Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this article, we demonstrate plasma-enhanced atomic layer deposition (PEALD) as an effective passivation technique to establish high interfacial quality of high-k/InGaAs structures. Performing PEALD-AlN as an interfacial passivation layer (IPL), excellent capacitance-voltage (C-V) characteristics have been achieved for the HfO2/n, p-In0.53Ga0.47As MOSCAPs. The effects of AlN-IPL on the effective work function (EWF) of metal and band alignment of the HfO2/AlN/In0.53Ga0.47As structure have also been investigated. In addition, the multilayer TiNi alloys were applied as gate dielectric for a suitable metal EWF with a small work function variation (WFV). A sub-nm equivalent oxide thickness (EOT) HfO2/In0.53Ga0.47As MOS device with low density of interface states and low leakage current density was obtained utilizing AlN-IPL and post remote-plasma (PRP) gas as pre-and post-gate treatments in an in-situ ALD process. The device performance and reliability of HfO2/In0.53Ga0.47As nMOSFETs with in-situ PEALD treatments have also been characterized.

Original languageEnglish
Title of host publication2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
EditorsRu Huang, Ting-Ao Tang, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages41-44
Number of pages4
ISBN (Electronic)9781467397179
DOIs
StatePublished - 31 Jul 2017
Event13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China
Duration: 25 Oct 201628 Oct 2016

Publication series

Name2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Conference

Conference13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
CountryChina
CityHangzhou
Period25/10/1628/10/16

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