@inproceedings{b94c3a0f91974d30a56259bfe0cbe46a,
title = "HfO2/AlN/In0.53Ga0.47As MOS devices electrical properties and reliability studies",
abstract = "In this article, we demonstrate plasma-enhanced atomic layer deposition (PEALD) as an effective passivation technique to establish high interfacial quality of high-k/InGaAs structures. Performing PEALD-AlN as an interfacial passivation layer (IPL), excellent capacitance-voltage (C-V) characteristics have been achieved for the HfO2/n, p-In0.53Ga0.47As MOSCAPs. The effects of AlN-IPL on the effective work function (EWF) of metal and band alignment of the HfO2/AlN/In0.53Ga0.47As structure have also been investigated. In addition, the multilayer TiNi alloys were applied as gate dielectric for a suitable metal EWF with a small work function variation (WFV). A sub-nm equivalent oxide thickness (EOT) HfO2/In0.53Ga0.47As MOS device with low density of interface states and low leakage current density was obtained utilizing AlN-IPL and post remote-plasma (PRP) gas as pre-and post-gate treatments in an in-situ ALD process. The device performance and reliability of HfO2/In0.53Ga0.47As nMOSFETs with in-situ PEALD treatments have also been characterized.",
author = "Chang, {Edward Yi} and Luc, {Quang Ho} and Do, {Huy Binh} and Chang, {Po Chun} and Lin, {Yueh Chin}",
year = "2017",
month = jul,
day = "31",
doi = "10.1109/ICSICT.2016.7998834",
language = "English",
series = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "41--44",
editor = "Ru Huang and Ting-Ao Tang and Yu-Long Jiang",
booktitle = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
address = "United States",
note = "null ; Conference date: 25-10-2016 Through 28-10-2016",
}