HfO2 nanocrystal memory on SiGe channel

Yu Hsien Lin*, Chao-Hsin Chien

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

This study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it increases electron/hole injection and the enhances program/erase speeds. This study compares the characteristics of HfO2 nanocrystal memories with different oxynitride tunnel oxide thicknesses on Si and epi-SiGe substrate. Results show that the proposed nonvolatile memory possesses superior characteristics in terms of considerably large memory window for two-bits operation, high speed program/erase for low power applications, long retention time, excellent endurance, and strong immunity to disturbance.

Original languageEnglish
Pages (from-to)5-9
Number of pages5
JournalSolid-State Electronics
Volume80
DOIs
StatePublished - 1 Jan 2013

Keywords

  • Flash memory
  • Hafnium oxide
  • Nanocrystals
  • Nonvolatile memories
  • SiGe channel

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