HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC Applications

Sun Jung Kim*, Byung Jin Cho, Ming Fu Li, Chunxiang Zhu, Albert Chin, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

49 Scopus citations

Abstract

We demonstrate high quality HfO2metal-insulator-metal (MIM) capacitors with a high capacitance of 4.7 fF/cm2 and a leakage current density of less than 10-8 A/cm2, meeting ITRS requirement for analog precision capacitor applications. In addition, we demonstrate that doping HfO2 with Lanthanide (Tb) at an optimum concentration improves both voltage linearity and leakage current density of HfO2 MIM capacitor, allowing further reduction of insulator thickness and achieving a capacitance density of 13.3 fF/μm2 with leakage current meeting requirements for RF bypass capacitors applications. These values are superior to that reported in the literature, suggesting the potential use of these dielectrics for future RF/mixed signal IC applications.

Original languageEnglish
Pages (from-to)77-78
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1 Oct 2003
Event2003 Symposium on VLSI Technology - Kyoto, Japan
Duration: 10 Jun 200312 Jun 2003

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