HfO 2 MIS capacitor with copper gate electrode

Tsu Hsiu Perng*, Chao-Hsin Chien, Ching Wei Chen, Ming Jui Yang, Peer Lehnen, Chun Yen Chang, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO 2 dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO 2 dielectric were also fabricated for comparison. Bias-temperature stress and charge-to-breakdown (Q BD ) test were conducted to examine the stability and reliability of these capacitors. In contrast with the high Cu drift rate in an SiO 2 dielectric, Cu in contact with HfO 2 seems to be very stable. The HfO 2 capacitors with a Cu-gate also depict higher capacitance without showing any reliability degradation, compared to the Al-gate counterparts. These results indicate that HfO 2 with its considerably high density of 9.68 g/cm 3 is acting as a good barrier to Cu diffusion, and it thus appears feasible to integrate Cu metal with the post-gate-dielectric ultralarge-scale integration manufacturing processes.

Original languageEnglish
Pages (from-to)784-786
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number12
DOIs
StatePublished - 1 Dec 2004

Keywords

  • Bias-temperature stress
  • Copper-gate (Cu-gate) electrode
  • Hafnium dioxide (HfO)

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