HfO 2 /HfSi x O y high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application

C. W. Yang*, Y. K. Fang, S. F. Chen, M. F. Wang, Tuo-Hung Hou, Y. M. Lin, L. G. Yao, S. C. Chen, M. S. Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Poly-Si gated NMOSFETs, with HfO 2 /HfSi x O y gate stacks for CMOS low-power application are reported for the first time. Compared to an SiO 2 control sample, the HfO 2 /HfSi x O y stack with equivalent oxide thickness of about 18 Å exhibits four-orders of magnitude reduction in gate leakage at V g = 1 V. Additionally, negligible hysteresis and comparable subthreshold swing are observed, indicating good interface quality and bulk film properties. Furthermore, the stack-caused inherent transconductance degradation is small; almost 66% of the normalised peak transconductance with respect to SiO 2 can be reached.

Original languageEnglish
Pages (from-to)692-694
Number of pages3
JournalElectronics Letters
Volume39
Issue number8
DOIs
StatePublished - 17 Apr 2003

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