HfLaON n-MOSFETs using a low work function HfSix gate

C. F. Cheng*, C. H. Wu, N. C. Su, S. J. Wang, S. P. McAlister, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

At a 1.2-nm equivalent oxide thickness, HfSix/Hf0.7 La0.3ON n-MOSFETs showed an effective work function of 4.33 eV, a low threshold voltage of 0.18 V, and a peak electron mobility of 215 cm2/(V · s). These self-aligned and gate-first HfSix/Hf0.7La0.3ON n-MOSFETs were processed using standard ion implantation and 1000-°C rapid thermal annealing,making them fully compatible with current very large scale integration fabrication lines.

Original languageEnglish
Pages (from-to)1092-1094
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number12
DOIs
StatePublished - 1 Dec 2007

Keywords

  • Electron mobility
  • HfLaON
  • HfSi
  • MOSFET
  • n-MOSFETs

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    Cheng, C. F., Wu, C. H., Su, N. C., Wang, S. J., McAlister, S. P., & Chin, A. (2007). HfLaON n-MOSFETs using a low work function HfSix gate. IEEE Electron Device Letters, 28(12), 1092-1094. https://doi.org/10.1109/LED.2007.909843