HfAlON n-MOSFETs Incorporating low-work function gate using ytterbium silicide

C. H. Wu*, B. F. Hung, Albert Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAlON gate dielectric with a 1.7-nm EOT. After a 600 °C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm2/V·;s. They have additional merit of a process compatible with current very large scale integration fabrication lines.

Original languageEnglish
Pages (from-to)454-456
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - 1 Jun 2006


  • HfAlON
  • YbSi

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