Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

P. M. Asbeck; Mau-Chung Chang; K. C. Wang; D. L. Miller; G. J. Sullivan; N. H. Sheng; E. Sovero; J. A. Higgins

doi:10.1109/TMTT.1987.1133876

Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

P. M. Asbeck, Mau-Chung Chang, K. C. Wang, D. L. Miller, G. J. Sullivan, N. H. Sheng, E. Sovero, J. A. Higgins

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This paper reviews the present status of GaAlAs/GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with f _max above 120 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain as high as 200 per stage. Breakdown voltages (BV _CB0 ) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.

Original language	English
Pages (from-to)	1462-1468
Number of pages	7
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	35
Issue number	12
DOIs	https://doi.org/10.1109/TMTT.1987.1133876
State	Published - 1 Jan 1987

Access to Document

10.1109/TMTT.1987.1133876

Fingerprint Dive into the research topics of 'Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits'. Together they form a unique fingerprint.

Cite this

@article{a9694b3f79964dbca9ec6b404db57195,

title = "Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits",

abstract = " This paper reviews the present status of GaAlAs/GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with f max above 120 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain as high as 200 per stage. Breakdown voltages (BV CB0 ) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.",

author = "Asbeck, {P. M.} and Mau-Chung Chang and Wang, {K. C.} and Miller, {D. L.} and Sullivan, {G. J.} and Sheng, {N. H.} and E. Sovero and Higgins, {J. A.}",

year = "1987",

month = jan,

day = "1",

doi = "10.1109/TMTT.1987.1133876",

language = "English",

volume = "35",

pages = "1462--1468",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits. / Asbeck, P. M.; Chang, Mau-Chung; Wang, K. C.; Miller, D. L.; Sullivan, G. J.; Sheng, N. H.; Sovero, E.; Higgins, J. A.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 35, No. 12, 01.01.1987, p. 1462-1468.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

AU - Asbeck, P. M.

AU - Chang, Mau-Chung

AU - Wang, K. C.

AU - Miller, D. L.

AU - Sullivan, G. J.

AU - Sheng, N. H.

AU - Sovero, E.

AU - Higgins, J. A.

PY - 1987/1/1

Y1 - 1987/1/1

N2 - This paper reviews the present status of GaAlAs/GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with f max above 120 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain as high as 200 per stage. Breakdown voltages (BV CB0 ) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.

AB - This paper reviews the present status of GaAlAs/GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with f max above 120 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain as high as 200 per stage. Breakdown voltages (BV CB0 ) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.

UR - http://www.scopus.com/inward/record.url?scp=84993724993&partnerID=8YFLogxK

U2 - 10.1109/TMTT.1987.1133876

DO - 10.1109/TMTT.1987.1133876

M3 - Article

AN - SCOPUS:84993724993

VL - 35

SP - 1462

EP - 1468

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 12

ER -

Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

Abstract

Access to Document

Other files and links

Cite this