Abstract
This paper reviews the present status of GaAlAs/GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with f max above 120 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain as high as 200 per stage. Breakdown voltages (BV CB0 ) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.
Original language | English |
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Pages (from-to) | 1462-1468 |
Number of pages | 7 |
Journal | IEEE Transactions on Microwave Theory and Techniques |
Volume | 35 |
Issue number | 12 |
DOIs | |
State | Published - 1 Jan 1987 |