Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

P. M. Asbeck, Mau-Chung Chang, K. C. Wang, D. L. Miller, G. J. Sullivan, N. H. Sheng, E. Sovero, J. A. Higgins

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


This paper reviews the present status of GaAlAs/GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with f max above 120 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain as high as 200 per stage. Breakdown voltages (BV CB0 ) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.

Original languageEnglish
Pages (from-to)1462-1468
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number12
StatePublished - 1 Jan 1987

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