The present status of GaAlAs/GaAs heterojunction bipolar transistor technology is reviewed and the impact of these devices on microwave and millimeter-wave integrated circuits is discussed. Devices with f//m//a//x above 100 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain of 200 per stage. Breakdown voltages (BV//C//B//O) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.
|Title of host publication||Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium|
|Number of pages||5|
|State||Published - 1 Jan 1987|
|Name||Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium|