HETEROJUNCTION BIPOLAR TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED CIRCUITS.

P. M. Asbeck*, Mau-Chung Chang, K. C. Wang, D. L. Miller, G. J. Sullivan, N. H. Sheng, E. A. Sovero, J. A. Higgins

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The present status of GaAlAs/GaAs heterojunction bipolar transistor technology is reviewed and the impact of these devices on microwave and millimeter-wave integrated circuits is discussed. Devices with f//m//a//x above 100 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain of 200 per stage. Breakdown voltages (BV//C//B//O) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.

Original languageEnglish
Title of host publicationDigest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium
PublisherIEEE
Pages1-5
Number of pages5
ISBN (Print)0818607742
DOIs
StatePublished - 1 Jan 1987

Publication series

NameDigest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium

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    Asbeck, P. M., Chang, M-C., Wang, K. C., Miller, D. L., Sullivan, G. J., Sheng, N. H., Sovero, E. A., & Higgins, J. A. (1987). HETEROJUNCTION BIPOLAR TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED CIRCUITS. In Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium (pp. 1-5). (Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium). IEEE. https://doi.org/10.1109/MCS.1987.1114503