Heterojunction Bipolar Transistors fo Microwave and Millimeter-Wave Integrated Circuits

P. M. Asbeck, Mau-Chung Chang, K. C. Wang, D. L. Miller, G. J. Sullivan, N. H. Sheng, E. Sovero, J. A. Higgins

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Abstract

This paper reviews the present status of GaAlAs/GaAs HBT technology and projects the impact of these devices on microwave and Millimeter-Wave integrated circuits. Devices with fmax above 120 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain as high as 200 per stage. Breakdown voltages (BVcm) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.

Original languageEnglish
Pages (from-to)2571-2579
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume34
Issue number12
DOIs
StatePublished - 1 Jan 1987

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    Asbeck, P. M., Chang, M-C., Wang, K. C., Miller, D. L., Sullivan, G. J., Sheng, N. H., Sovero, E., & Higgins, J. A. (1987). Heterojunction Bipolar Transistors fo Microwave and Millimeter-Wave Integrated Circuits. IEEE Transactions on Electron Devices, 34(12), 2571-2579. https://doi.org/10.1109/T-ED.1987.23356