Heterojunction Bipolar Transistor Design for Power Applications

Guang Bo Gao, Hadis Morkoç, Mau-Chung Chang

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


Design rules of AlGaAs/GaAs heterojunction bipolar transistors for power applications are presented and compared to those for Si microwave power transistors. Concepts discussed include the tradeoff between power gain, output power, power-added efficiency in the layout design, layer structure selection, and thermal design.

Original languageEnglish
Pages (from-to)1987-1997
Number of pages11
JournalIEEE Transactions on Electron Devices
Issue number9
StatePublished - 1 Jan 1992

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