Heterointerface quality of InGaP-GaAs superlattices determined by photopumping, x-ray analysis, and transmission electron microscopy

Q. Yang*, D. A. Kellogg, Chun-Hsiung Lin, G. E. Stillman, N. Holonyak

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Data are presented on the room-temperature, photopumped, continuous laser operation of multiple-well InGaP-GaAs quantum-well heterostructures and superlattices grown by low-pressure metalorganic chemical vapor deposition. Continuous laser operation at room temperature indicates high material quality and minimal nonradiative recombination at the heterointerfaces. The lasing wavelength near the GaAs band gap is consistent with weak bandfilling, and small quantum confinement of electrons and large confinement of holes (mh>me, ΔEu>ΔEc). Double-crystal x-ray diffraction and transmission electron microscopy data confirm the high material quality and heterointerface abruptness.

Original languageEnglish
Pages (from-to)1101-1103
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number8
DOIs
StatePublished - 23 Aug 1999

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