Heteroepitaxial growth of Ga0.51In0.49P/GaAs on Si by low-pressure organometallic chemical vapor deposition

Ray-Hua Horng*, D. S. Wuu, M. K. Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In this letter we report on preliminary results of heteroepitaxial growth of Ga0.51In0.49P on Si with a GaAs interlayer by low-pressure organometallic chemical vapor deposition (OMCVD). The surface morphologies and crystalline quality of the films were found to be critically dependent on the growth parameters of the initial GaAs buffer layer. Under optimum conditions, specular single-crystal Ga0.51In0.49P epilayers can be reproducibly obtained. Capacitance-voltage measurements show that the carrier distribution in the grown layer is very uniform. The 77 K photoluminescence spectrum exhibits a strong near-band-edge emission with a half-width of 22 meV. These results can compete with those reported previously for the OMCVD-grown GaxIn1-xP on GaAs substrates.

Original languageEnglish
Pages (from-to)2614-2616
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number26
DOIs
StatePublished - 1 Dec 1988

Fingerprint Dive into the research topics of 'Heteroepitaxial growth of Ga<sub>0.51</sub>In<sub>0.49</sub>P/GaAs on Si by low-pressure organometallic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this