Helicon wave plasma doping system

Y. Sasaki, B. Mizuno, S. Akama, R. Higaki, K. Tsutsui, S. Ohomi, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A new concept of Plasma Doping (PD) equipment is demonstrated. Shallow profiles and low resistance will be required for sub 50 nm MOS transistor. Dose control by changing plasma doping time is shown in this paper.

Original languageEnglish
Title of host publicationExtended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages37-38
Number of pages2
ISBN (Electronic)4891140283, 9784891140281
DOIs
StatePublished - 2002
Event3rd International Workshop on Junction Technology, IWJT 2002 - Tokyo, Japan
Duration: 2 Dec 20023 Dec 2002

Publication series

NameExtended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002

Conference

Conference3rd International Workshop on Junction Technology, IWJT 2002
CountryJapan
CityTokyo
Period2/12/023/12/02

Fingerprint Dive into the research topics of 'Helicon wave plasma doping system'. Together they form a unique fingerprint.

Cite this