@inproceedings{872ca10be12144ec8d780ed9e4609085,
title = "Helicon wave plasma doping system",
abstract = "A new concept of Plasma Doping (PD) equipment is demonstrated. Shallow profiles and low resistance will be required for sub 50 nm MOS transistor. Dose control by changing plasma doping time is shown in this paper.",
author = "Y. Sasaki and B. Mizuno and S. Akama and R. Higaki and K. Tsutsui and S. Ohomi and H. Iwai",
year = "2002",
doi = "10.1109/IWJT.2002.1225195",
language = "English",
series = "Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "37--38",
booktitle = "Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002",
address = "United States",
note = "null ; Conference date: 02-12-2002 Through 03-12-2002",
}