Heating Effects on the Accuracy of HBT Voltage Comparators

Keh Chung Wang, Peter M. Asbeck, Mau-Chung Chang, D. L. Miller, Gerard J. Sullivan, John J. Corcoran, Thomas Hornak

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Voltage comparators implemented with GaAs/ (GaAl)As heterojunction bipolar transistors (HBT's) were examined for dynamic hysteresis effects. Heating effects were identified as the major source of hysteresis. An approximate model is proposed to explain the measured data. Suggestions for analog-to-digital converter design are discussed.

Original languageEnglish
Pages (from-to)1729-1735
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume34
Issue number8
DOIs
StatePublished - 1 Jan 1987

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